BC847S multi-chip transistor (npn) application this device is designed for general purpose amplifier applications marking :1c maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 50 v ceo collector-emitter voltage 45 v ebo emitter-base voltage 6 v i c collector current-continuous 200 ma p d power dissipation 200 mw r ja thermal resistance. junction to ambient 625 /w t j junction temperature 150 t stg storage temperature range -55~+150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v (br)cbo i c =10a,i e =0 50 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 45 v emitter-base breakdown voltage v (br)ebo i e =10a,i c =0 6 v collector cut-off current i cbo v cb =30v,i e =0 15 emitter cut-off current i ebo v eb =4v , i c =0 15 na dc current gain* h fe v ce =5v,i c =2ma 110 630 v ce(sat)(1) i c =10ma,i b =0.5ma 0.25 v collector-emitter sa turation voltage v ce(sat)(2) i c =100ma,i b =5ma 0.65 v v be(1) v ce =5v,i c =2ma 0.58 0.7 v base-emitter voltage v be(2) v ce =5v,i c =10ma 0.77 v transition frequency f t v ce =5v,i c =20ma ,f=100mhz 200 mhz collector output capacitance c ob v cb =10v,i e =0,f=1mhz 2 pf *pulse test: pulse width 300 s, duty cycle 2.0%. so t -363 e1 b 1 c2 c1 b2 e2 www.htsemi.com semiconductor jinyu 1 date:2011/ 05
110100 100 200 300 400 500 600 700 800 900 1000 110100 10 100 1000 0 1020304050 0 10 20 30 40 50 1 10 100 1 2 3 4 5 6 7 8 9 10 110100 10 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 0 25 50 75 100 125 150 0 50 100 150 200 250 300 110100 10 100 1000 v besat ?? i c ta=25 o c ta=100 o c common emitter i c /i b =20 30 3 200 collector current i c (ma) base-emitter saturation voltage v besat (mv) ta=25 o c ta=100 o c common emitter v ce =5v 300 30 30 3 200 h fe ?? i c collector current i c (ma) dc current gain h fe common emitter ta=25 o c i c ?? v ce 100ua 90ua 80ua 70ua 60ua 50ua 40ua 30ua 20ua i b =10ua collector current i c (ma) collector-emitter voltage v ce (v) 30 3 f=1mhz i e =0 ta=25 o c c ob ?? v cb output capacitance c ob (pf) collector-base voltage v cb (v) typical characteristics f t ?? i c 300 30 30 3 common emitter v ce =5v ta=25 o c transition frequency f t (mhz) collector current i c (ma) i c ?? v be 30 3 0.3 v ce =5v ta=25 o c collcetor current i c (ma) base-emmiter voltage v be (v) p c ?? t a collector power dissipation p c (mw) ambient temperature t a ( o c) 200 300 30 30 3 v cesat ?? i c ta=25 o c ta=100 o c common emitter i c /i b =20 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) BC847S www.htsemi.com semiconductor jinyu 2 date:2011/ 05
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